IPD65R380E6

Name: IPD65R380E6
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 650V 10.6A TO252-3

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	380mOhm @ 3.2A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 100 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	CoolMOS™ E6
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 320µA

漏源电压	650 V
Current - Continuous Drain (Id) @ 25°C	10.6A (Tc)
最大功耗	83W (Tc)

工作温度	-55°C~150°C(TJ)