IPD60R210CFD7ATMA1

Infineon Technologies

IPD60R210CFD7ATMA1

Datasheet

模拟与电源

MOSFET N CH

在产TO-252-4, DPak (3 Leads + Tab)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs210mOhm @ 4.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1015 pF @ 400 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusActive
系列CoolMOS™ CFD7
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 240µA

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
最大功耗64W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-4, DPak (3 Leads + Tab)
供应商器件封装DPAK (TO-252)

环境

工作温度-55°C ~ 150°C (TJ)