IPD60R1K4C6

Name: IPD60R1K4C6
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 600V 3.2A TO252-3

已停产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.1A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 100 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Discontinued at
系列	CoolMOS™ C6
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 90µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3.2A (Tc)
最大功耗	28.4W (Tc)

工作温度	-55°C ~ 150°C (TJ)