IPD50N06S409ATMA2

Name: IPD50N06S409ATMA2
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 60V 50A TO252-31

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3785 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 34µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
最大功耗	71W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)