IPD40N03S4L08ATMA1

Name: IPD40N03S4L08ATMA1
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 30V 40A TO252-31

已停产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	8.3mOhm @ 40A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1520 pF @ 15 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Discontinued at
系列	OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2.2V @ 13µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
最大功耗	42W (Tc)

封装	Tape & Reel (TR)