IPD100N04S402ATMA1

Name: IPD100N04S402ATMA1
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 40V 100A TO252-3

在产TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2mOhm @ 100A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	9430 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 95µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
最大功耗	150W (Tc)

工作温度	-55°C ~ 175°C (TJ)