IPD06P002NSAUMA1

Name: IPD06P002NSAUMA1
Brand: Infineon Technologies

模拟与电源

MOSFET P-CH 60V 35A TO252-3

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	38mOhm @ 35A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 30 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
系列	OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1.7mA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
最大功耗	125W (Tc)

工作温度	-55°C~175°C(TJ)