IPD031N03M G

Name: IPD031N03M G
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 30V 90A TO252-3

已停产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3.1mOhm @ 30A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5300 pF @ 15 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Discontinued at
系列	OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.2V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)

工作温度	-55°C ~ 175°C (TJ)