IPB80R290C3AATMA2

Name: IPB80R290C3AATMA2
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 800V 17A TO263-3

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	290mOhm @ 11A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 100 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	CoolMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.9V @ 1mA

漏源电压	800 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
最大功耗	227W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)