IPB65R045C7ATMA2

Name: IPB65R045C7ATMA2
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 650V 46A TO263-3

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	45mOhm @ 24.9A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4340 pF @ 400 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	CoolMOS™ C7
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1.25mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
最大功耗	227W (Tc)

工作温度	-55°C ~ 150°C (TJ)