IPB60R950C6ATMA1

Name: IPB60R950C6ATMA1
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 600V 4.4A D2PAK

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	950mOhm @ 1.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 100 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
系列	CoolMOS™ C6
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 130µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)
最大功耗	37W (Tc)

工作温度	-55°C ~ 150°C (TJ)