IPB45P03P4L11ATMA2

Name: IPB45P03P4L11ATMA2
Brand: Infineon Technologies

模拟与电源

MOSFET_(20V 40V) PG-TO263-3

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	10.8mOhm @ 45A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3770 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	Automotive, AEC-Q101, OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	+5V, -16V
Vgs(th) (Max) @ Id	2V @ 85µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
最大功耗	58W (Tc)

工作温度	-55°C~175°C(TJ)