IPB180P04P4L02ATMA1

Name: IPB180P04P4L02ATMA1
Brand: Infineon Technologies

模拟与电源

MOSFET P-CH 40V 180A TO263-7

已停产TO-263-7, D²Pak (6 Leads + Tab)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.4mOhm @ 100A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	18700 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Not For New Designs
系列	OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2.2V @ 410µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
最大功耗	150W (Tc)

工作温度	-55°C ~ 175°C (TJ)