IPB110N06L G

Name: IPB110N06L G
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 60V 78A TO-263

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11mOhm @ 78A, 10V
基础料号	IPB110N
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 30 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2V @ 94µA

漏源电压	60 V
Current - Continuous Drain (Id) @ 25°C	78A (Tc)