IPB100P03P3L-04

Name: IPB100P03P3L-04
Brand: Infineon Technologies

模拟与电源

P-CHANNEL POWER MOSFET

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.3mOhm @ 80A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	9300 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	OptiMOS™-P
技术	MOSFET (Metal Oxide)
Vgs (Max)	+5V, -16V
Vgs(th) (Max) @ Id	2.1V @ 475µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
最大功耗	200W (Tc)

工作温度	-55°C~175°C(TJ)