IPB057N06NATMA1

Name: IPB057N06NATMA1
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 60V 17A/45A D2PAK

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	5.7mOhm @ 45A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 30 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.8V @ 36µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 45A (Tc)
最大功耗	3W (Ta), 83W (Tc)

工作温度	-55°C ~ 175°C (TJ)