IPB044N15N5ATMA1

Name: IPB044N15N5ATMA1
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 150V 174A TO263-7

在产TO-263-7, D²Pak (6 Leads + Tab)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.4mOhm @ 87A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	8000 pF @ 75 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.6V @ 264µA

漏源电压	150 V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Current - Continuous Drain (Id) @ 25°C	174A (Tc)
最大功耗	300W (Tc)

工作温度	-55°C ~ 175°C (TJ)