IPB034N06N3GATMA1

Name: IPB034N06N3GATMA1
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 60V 100A TO263-7

停产/老旧TO-263-7, D²Pak (6 Leads + Tab)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3.4mOhm @ 100A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 30 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
系列	OptiMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 93µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
最大功耗	167W (Tc)

工作温度	-55°C ~ 175°C (TJ)