通用
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8130 pF @ 37.5 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | OptiMOS™ 3 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.8V @ 155µA |