IMZA65R027M1HXKSA1

Name: IMZA65R027M1HXKSA1
Brand: Infineon Technologies

模拟与电源

MOSFET 650V NCH SIC TRENCH

在产TO-247-4模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	34mOhm @ 38.3A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	2131 pF @ 400 V
制造商	Infineon Technologies
安装类型	Through Hole
Product Status	Active
系列	CoolSiC™
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+23V, -5V
Vgs(th) (Max) @ Id	5.7V @ 11mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
最大功耗	189W (Tc)

工作温度	-55°C ~ 150°C (TJ)