通用
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V |
|---|---|
| FET Feature | Current Sensing |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 800 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Not For New Designs |
| 系列 | CoolSiC™ |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -10V |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |