通用
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 60A, 18V |
|---|---|
| 基础料号 | IMYH200 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 246 nC @ 18 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Active |
| 系列 | CoolSiC™ |
| 技术 | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +20V, -7V |
| Vgs(th) (Max) @ Id | 5.5V @ 48mA |