通用
| Rds On (Max) @ Id, Vgs | 26.9mOhm @ 41A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3460 nF @ 25 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Active |
| 系列 | CoolSiC™ |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Vgs(th) (Max) @ Id | 5.2V @ 17.6mA |