通用
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8.5A, 18V |
|---|---|
| 基础料号 | IMBG120 |
| FET Feature | Standard |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 763 pF @ 800 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | CoolSiC™ |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +18V, -15V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |