IGP01N120H2

Infineon Technologies

IGP01N120H2

模拟与电源

POWER BIPOLAR TRANSISTOR NPN

在产TO-220-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge8.6 nC
输入类型Standard
制造商Infineon Technologies
安装类型Through Hole
Product StatusActive
Switching Energy140µJ
Td (on/off) @ 25°C13ns/370ns
Test Condition800V, 1A, 241Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 1A

电气

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)3.2 A
Current - Collector Pulsed (Icm)3.5 A
Power - Max28 W

机械

封装Bulk
Package / CaseTO-220-3
供应商器件封装PG-TO220-3-1

环境

工作温度-40°C~150°C(TJ)