IGB03N120H2ATMA1

Infineon Technologies

IGB03N120H2ATMA1

Datasheet

模拟与电源

IGBT 1200V 9.6A 62.5W TO263-3

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号IGB03
Gate Charge22 nC
输入类型Standard
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
Switching Energy290µJ
Td (on/off) @ 25°C9.2ns/281ns
Test Condition800V, 3A, 82Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 3A

电气

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)9.6 A
Current - Collector Pulsed (Icm)9.9 A
Power - Max62.5 W

机械

封装Tape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装PG-TO263-3-2

环境

工作温度-40°C ~ 150°C (TJ)