通用
| Diode Configuration | 1 Pair Common Cathode |
|---|---|
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 系列 | CoolSiC™+ |
| 技术 | SiC (Silicon Carbide) Schottky |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Current - Reverse Leakage @ Vr | 240 µA @ 1200 V |
| 速度 | No Recovery Time > 500mA (Io) |
机械
| 封装 | Tube |
|---|---|
| Package / Case | TO-247-3 |
| 供应商器件封装 | PG-TO247-3 |
环境
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|