通用
| 基础料号 | IDW10G65 |
|---|---|
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Discontinued at |
| Reverse Recovery Time (trr) | 0 ns |
| 系列 | CoolSiC™+ |
| 技术 | SiC (Silicon Carbide) Schottky |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 400 µA @ 650 V |
| 速度 | No Recovery Time > 500mA (Io) |
机械
| 封装 | Tube |
|---|---|
| Package / Case | TO-247-3 |
| 供应商器件封装 | PG-TO247-3-41 |
环境
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|