通用
| 基础料号 | IDV02S60 |
|---|---|
| Capacitance @ Vr, F | 60pF @ 1V, 1MHz |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 0 ns |
| 系列 | CoolSiC™+ |
| 技术 | SiC (Silicon Carbide) Schottky |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 2 A |
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 15 µA @ 600 V |
| 速度 | No Recovery Time > 500mA (Io) |
机械
| 封装 | Tube |
|---|---|
| Package / Case | TO-220-2 Full Pack |
| 供应商器件封装 | PG-TO220-2 Full Pack |
环境
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|