IDD08SG60CXTMA2

Infineon Technologies

IDD08SG60CXTMA2

Datasheet

模拟与电源

DIODE SIL CARB 600V 8A TO252-3

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号IDD08SG60
Capacitance @ Vr, F240pF @ 1V, 1MHz
制造商Infineon Technologies
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)0 ns
系列CoolSiC™+
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If2.1 V @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr70 µA @ 600 V
速度No Recovery Time > 500mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装PG-TO252-3

环境

Operating Temperature - Junction-55°C ~ 175°C