IAUA250N04S6N006AUMA1

Infineon Technologies

IAUA250N04S6N006AUMA1

Datasheet

模拟与电源

MOSFET_(20V 40V) PG-HSOF-5

已停产5-PowerSFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs0.64mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11064 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusNot For New Designs
系列OptiMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 145µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C450A (Tj)
最大功耗250W (Tc)

机械

封装Tape & Reel (TR)
Package / Case5-PowerSFN
供应商器件封装PG-HSOF-5-4

环境

工作温度-55°C~175°C(TJ)