通用
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 100A, 18V |
|---|---|
| 基础料号 | FF8MR12 |
| 配置 | 2 N-Channel |
| FET Feature | Silicon Carbide (SiC) |
| Gate Charge (Qg) (Max) @ Vgs | 297nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800pF @ 800V |
| 制造商 | Infineon Technologies |
| 安装类型 | Chassis Mount |
| Product Status | Active |
| 系列 | CoolSiC™ |
| 技术 | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5.15V @ 40mA |