来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 200mOhm @ 9A, 5V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 系列 | SIPMOS® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| 漏源电压 | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| 最大功耗 | 95W (Tc) |
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| 供应商器件封装 | PG-TO262-3 |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|