BUZ102SL-E3045A

Name: BUZ102SL-E3045A
Brand: Infineon Technologies

模拟与电源

N-CHANNEL POWER MOSFET

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	18mOhm @ 33A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1730 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	SIPMOS®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±14V
Vgs(th) (Max) @ Id	2V @ 90µA

漏源电压	55 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
最大功耗	120W (Tc)

工作温度	-55°C~175°C(TJ)