BSS169IXTSA1

Name: BSS169IXTSA1
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 100V 190MA SOT23-3

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.9Ohm @ 190mA, 10V
FET Feature	Depletion Mode
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.1 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds	51 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1.8V @ 50µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	0V, 10V
Current - Continuous Drain (Id) @ 25°C	190mA (Ta)
最大功耗	360mW (Ta)

工作温度	-55°C ~ 150°C (TJ)