通用
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.7A, 10V |
|---|---|
| 基础料号 | BSO215 |
| 配置 | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 246pF @ 25V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| 系列 | SIPMOS® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 10µA |