BSL215CH6327XTSA1

Infineon Technologies

BSL215CH6327XTSA1

Datasheet

模拟与电源

MOSFET N/P-CH 20V 1.5A TSOP6-6

在产SOT-23-6 Thin, TSOT-23-6模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs140mOhm @ 1.5A, 4.5V
配置N and P-Channel Complementary
FET FeatureLogic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs0.73nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds143pF @ 10V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusActive
系列OptiMOS™
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 3.7µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C1.5A
Power - Max500mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
供应商器件封装PG-TSOP6-6

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101