通用
| 基础料号 | BDP950 |
|---|---|
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Last Time Buy |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Power - Max | 5 W |
| Frequency - Transition | 100MHz |
机械
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| 供应商器件封装 | PG-SOT223-4-10 |
环境
| 工作温度 | 150°C (TJ) |
|---|