AIMW120R080M1XKSA1

Name: AIMW120R080M1XKSA1
Brand: Infineon Technologies

模拟与电源

1200V COOLSIC MOSFET PG-TO247-3

在产TO-247-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	104mOhm @ 13A, 15V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	1060 pF @ 800 V
制造商	Infineon Technologies
安装类型	Through Hole
Product Status	Active
系列	CoolSiC™
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+20V, -7V
Vgs(th) (Max) @ Id	5.7V @ 5.6mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
最大功耗	150W (Tc)

封装	Tube