AIMW120R035M1HXKSA1

Name: AIMW120R035M1HXKSA1
Brand: Infineon Technologies

模拟与电源

1200V COOLSIC MOSFET PG-TO247-3

在产TO-247-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	46mOhm @ 25A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	2130 pF @ 800 V
制造商	Infineon Technologies
安装类型	Through Hole
Product Status	Active
系列	CoolSiC™
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+23V, -7V
Vgs(th) (Max) @ Id	5.7V @ 10mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
最大功耗	228W (Tc)

封装	Tube