AIKB30N65DF5ATMA1

Infineon Technologies

AIKB30N65DF5ATMA1

Datasheet

模拟与电源

IC DISCRETE 650V TO263-3

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge70 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Infineon Technologies
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)67 ns
Switching Energy330µJ (on), 100µJ (off)
Td (on/off) @ 25°C25ns/188ns
Test Condition400V, 15A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)55 A
Current - Collector Pulsed (Icm)90 A
Power - Max188 W

机械

封装Tape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装PG-TO263-3

环境

工作温度-40°C~175°C(TJ)