RFP45N02L

Name: RFP45N02L
Brand: Harris Corporation

模拟与电源

N-CHANNEL POWER MOSFET

在产TO-220-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	22mOhm @ 45A, 5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 15 V
制造商	Harris Corporation
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
最大功耗	90W (Tc)

工作温度	-55°C~175°C(TJ)