RF1S50N06

Name: RF1S50N06
Brand: Harris Corporation

模拟与电源

50A, 60V, 0.022 OHM, N-CHANNEL

在产TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	22mOhm @ 50A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	2020 pF @ 25 V
制造商	Harris Corporation
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
最大功耗	131W (Tc)

工作温度	-55°C~175°C(TJ)