IRFD9123

Name: IRFD9123
Brand: Harris Corporation

模拟与电源

MOSFET P-CH 100V 1A 4DIP

停产/老旧4-DIP (0.300", 7.62mm)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	600mOhm @ 600mA, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 25 V
制造商	Harris Corporation
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	100 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)