SSFB2310L

Good-Ark Semiconductor

SSFB2310L

Datasheet

模拟与电源

MOSFET, N-CH, SINGLE, 9.9A, 20V

在产6-UDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs13mOhm @ 5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 10 V
制造商Good-Ark Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id1V @ 250µA

电气

漏源电压20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C9.9A (Ta)
最大功耗2.01W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-UDFN Exposed Pad
供应商器件封装6-DFN (2x2)

环境

工作温度-55°C ~ 150°C (TJ)