GSFT06150

Good-Ark Semiconductor

GSFT06150

Datasheet

模拟与电源

MOSFET, N-CH, SINGLE, 150.00A, 6

在产TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4mOhm @ 75A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5451 pF @ 30 V
制造商Good-Ark Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
最大功耗220W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装TO-263 (D2PAK)

环境

工作温度-55°C ~ 175°C (TJ)