GT750P10K

Name: GT750P10K
Brand: Goford Semiconductor

模拟与电源

P-CH,-100V,-24A,RD(MAX)<85M@-10V

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	85mOhm @ 20A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1940 pF @ 50 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
最大功耗	79W (Tc)

工作温度	-55°C ~ 150°C (TJ)