GT52N10D5I

Name: GT52N10D5I
Brand: Goford Semiconductor

模拟与电源

N100V,65A,RD<8M@10V,VTH1.0V~2.5V

停产/老旧8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	7.5mOhm @ 50A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2428 pF @ 50 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
最大功耗	79W (Tc)

工作温度	-55°C ~ 150°C (TJ)