GT100N12M

Name: GT100N12M
Brand: Goford Semiconductor

模拟与电源

N120V,RD(MAX)<10M@10V,VTH2.5V~3

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	10mOhm @ 35A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3050 pF @ 60 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 250µA

漏源电压	120 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
最大功耗	120W (Tc)

工作温度	-55°C~150°C(TJ)