GT080N08D5

Name: GT080N08D5
Brand: Goford Semiconductor

模拟与电源

N85V,65A,RD<8.5M@10V,VTH2.0V~4.0

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	8mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1885 pF @ 50 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	85 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
最大功耗	69W (Tc)

工作温度	-55°C ~ 150°C (TJ)